The maximum temperature is 1400 degrees C
Fully programmable  minimum 2 degrees C increments
Its primary use is annealing ,recrystalizing ,Oxidation
As well as other high temperature processes
I.e. the melting of glass into/over silicon etched trenches.
The furnace can process from 1-25 wafers at a time.
Wafers are sealed into a quartz tube to prevent contamination
Gases available are O2, Ni, Ar ..
Wet dry oxidation is available.
A bubbler with an Oxygen flow provides wet Oxidation.
The tool is very effective in the Oxidation of Silicon Carbide
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