• Silicon 50-200 mm
  • Glass  from microscope slides to 200 mm
  • Including borosilicate glass often used with anodic bonding
  • Example Hoya SD-2
  • Alumina and other ceramic substrates 50 X 50 mm and larger
  • Lithium Niobate from 50 to 150 mm
  • Silicon Carbide 50 to 150 mm including Hi-Temp annealing to 1400 C
  • Germanium 100 mm
  • P(L)ZT custom  as specified.
  • ITO we deposit on 50 to 200 mm glass  and pattern as needed
  • High temperature flexible materials including Kapton

The maximum temperature is 1400 degrees C Fully programmable  minimum 2 degrees C increments Its primary use is annealing ,recrystalizing ,Oxidation As well as other high temperature processes I.e. the melting of glass into/over silicon etched trenches. The furnace can process from 1-25 wafers at a time. Wafers are sealed into a quartz tube to prevent contamination Gases available are O2, Ni, Ar .. Wet dry oxidation is available.
A bubbler with an Oxygen flow provides wet Oxidation. The tool is very effective in the Oxidation of Silicon Carbide For details contact

MSPB is a very low cost process to produce channels via’s interconnections etc. It is a parallel process as opposed to serial processing of one via at a time. Our process uses a photo sensitive tape laminated to the substrate; the tape is patterned using standard lithography. Only a single glass mask is used. The next process is to powder blast usually with ceramic or diamond powders in the micron ranges. The areas no longer covered by the film are etched while the covered area deflect the particles/powder typical finish ie roughness  averages < 1 micron.

Pattern on the mask will be replicated on the wafer surface with absolute precision and NO post processing or polishing is needed, unlike other technologies i.e. laser drilling. Tape is now removed, and the wafer is ready for subsequent processes. As an example metalizing thin films of gold aluminum copper etc. Turn around processing time is rapid, less than one week for small quantities. Our technology can handle difficult materials to machine that are prone to breakage, chip, crack such as Glass, ceramics, sapphire Silicon carbide etc. MSBP is a dry, low stress, fast and very precise in the removal of defined material.

In short MSBP features

  • Pattern creation channels via’s (holes)
  • Large area material removal
  • Marking parts
  • Surface texturing /finishing/polishing
  • Coating removal (thin films) without using strong toxic chemicals
  • Creating /manipulating MEMS devices
  • Micro fluidic (lab on) chip devices

MSBP is considered a non polluting green technology

For design tolerances products and application assistance etc, contact

Via's in silicon wafer
Via's in silicon wafer
(click on image to see full size)

Elume provides Anodic bonding processes
Glass to glass, as well as glass to Silicon.
Our primary customers are companies in the Life sciences, Biotech and Pharmaceutical
Combined with our sculpting  (micro/nano channels) the wafers by either using our Micro blasting/ photo etching technology, plasma and or wet etching we can offer an integrated approach to develop your micro engineered devices.
We can also sit down with your company personnel to assist in finding the most practical as well as cost effective solution..
The mechanism involved in the bonding processes attributed to mobile ions in the glass.
At an elevated temperature the positive sodium ions in the glass have an increased mobility and are attracted to the negative electrode on the glass surface and are removed.
The resulting electric field between the surfaces pulls them into contact..
For good bonding a higher voltage is required if lower temperatures are used..
After the voltage is removed the structures are held together by a chemical bond.
This is an IRREVERSABLE bonding process. Therefore it becomes critical to have perfect alignment and particle free between the surfaces to be bonded.
Typical bonding parameters 450 degrees C at 1000 volts

Following is a simplified set up for anodic bonding.

Anodic Bonding - Glass To Glass Anodic Bonding - Glass To Silicon Anodic Bonding - Microfluidics Anodic Bonding

Spin coating, polyimides, Cyclotenes, Teflon, spin-on glass, Sol-Gel precursors, etc. can replace and/or augment current mainstream technologies, including LPCVD, PECVD, CMP, vacuum deposition / sputtering, etc. Our MMF excels in this alternative process technology , using off-the-shelf materials or modifying/formulating them in-house where applicable.

Teflon AF ( K < 1.9 ) for RF, Microwave & Medical Devices Pos/Neg photo resists including SU-8/2000 epoxy types Pos/Neg tone photo-sensitive Polyimides ( 5000A > 250um ) Spin-on Glass (SOG) * Silk * BCB * Silicones * Electro-Optical UV Curable SiO2 * Low temperature Sol-Gel ( metals, oxides, transparent conductors -- ideal for nanotechnology ) Polymers for ( flexible ) Oled & other organic devices Dissolvable Wafers.

SCT is an attractive alternative deposition method. SCT processes use equipment that is much less expensive than competing high-energy-consuming CVD processes requiring special vacuum pumps, load locks, and expensive quartzware.

A single piece of our in-line SCT equipment is used to deposit and cure a wider variety of materials, inclusive of solgels, than a single CVD tool. The ability to deposit multiple materials and layers with the same mechanical hardware set allows for higher die yield at lower cost per finished wafer. One of our MMF built-in features is that we can eliminate batch processing altogether wherever practical, reducing the risk of misprocessing large numbers of wafers.

Spin coating is performed at room temperature (20-25°C), Sub-micron particles, in colloidal suspension are deposited using processing technique similar to photoresist. A pre-measured amount of the selected material is dispensed onto silicon, glass or similar type substrates. The final film thickness depends on the selected spining speed, time as well as the curing temperature.

During the spin cycle the liquid begins to vaporize leaving behind a semi-solid thin film. To cross link, solidify these films they undergo a series of hot plate bakes with a final cure in our quartz furnace at temperatures varying between 350-470°C. We convert these liquid organic and inorganic materials into dielectric films, conductor films (primarily aluminum, oxides) and more recently multi-layer semiconductor films. Fully cured materials are solid and stable between -200°C to > 200°C. Unlike mainstream (inorganic) materials, processed liquids are essentially pinhole free with virtually undetectable leakage currents (process sensitive). This fact alone greatly increases "chip" yield and therefore is worth considering.

Low-K values dramatically increase data processing speeds (by reducing the RC time constant) at the same time as minimizing parasitic capacitance between metal layers. Dielectric breakdown voltages approach 6x10(6) V/cm

Part II

Some other important features about Spin Coat Processing:

  • Substantial decrease in processing costs per wafer
  • Good adhesion to metal (material dependent)
  • Important material in flat panel (micro) display manufacturing
  • Excellent uniformity over large substrate area
  • Un-matched process repeatibility
  • Ultra-low particle defect density
  • Easy of process adaptation to customer needs
  • Lack of plasma damage

Note: CBC materials in addition are virtually non-hygroscopic.

Typical thicknesses

  • Spin on glass SOG 500 A to 2 microns
  • Teflon AF 500 A to 3 microns
  • BCB photoimagable  1000 to 20 mocrons
  • Good for planarization
  • Photoimagable Polyimide series 1 1000 A to 25 microns
  • Series 2 25 – 150 microns
  • Dow photoimagable Silicones contact
  • SU 8 Series 1.0 to 100 microns
  • Photo resists various contact
  • Sol-Gel materials contact

Spin Coating - Spin Coat Processing - SCT - Wafer Spin Coating - Semiconductor Spin Coating - Flat Panel Spin Coating